INFLUENCE OF THE INTERFACE AND OF THE CHANNEL VOLUME ON 1/F NOISE OF MOS-TRANSISTORS BIASED IN THE LINEAR REGION AT STRONG INVERSION

被引：7

作者：

GRABOWSKI, F

机构：

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 01期

关键词：

D O I：

10.1016/0038-1101(88)90094-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：115 / 120

页数：6

共 15 条

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