EQUIVALENT INPUT SPECTRUM AND DRAIN CURRENT SPECTRUM FOR 1-F NOISE IN SHORT CHANNEL MOS-TRANSISTORS

被引：5

作者：

GENTIL, P

MOUNIB, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 05期

关键词：

D O I：

10.1016/0038-1101(81)90037-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：411 / 414

页数：4

共 12 条

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[9] SCANNING ELECTRON-MICROSCOPE MEASUREMENTS ON SHORT CHANNEL MOS-TRANSISTORS [J].

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[10] MODEL FOR 1-F NOISE IN MOS-TRANSISTORS BIASED IN THE LINEAR REGION [J].

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