PRECISION MODELING OF THE MASK SUBSTRATE EVOLUTION DURING ION ETCHING

被引：31

作者：

KATARDJIEV, IV ^{[1
]}

CARTER, G ^{[1
]}

NOBES, MJ ^{[1
]}

SMITH, R ^{[1
]}

机构：

[1] LOUGHBOROUGH UNIV TECHNOL,DEPT MATH,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575570

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2443 / 2450

页数：8

共 19 条

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[5] A 2ND-ORDER EROSION SLOWNESS THEORY OF THE DEVELOPMENT OF SURFACE-TOPOGRAPHY BY ION-INDUCED SPUTTERING
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[6] GROWTH OF TOPOGRAPHY DURING SPUTTERING OF AMORPHOUS SOLIDS .4. GENERALIZED THEORY
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[J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (10) : 1473 - 1481
[7] CARTER G, 1986, NATO ASI SERIES E, V112
[8] EVOLUTION OF WELL-DEFINED SURFACE CONTOUR SUBMITTED TO ION-BOMBARDMENT - COMPUTER-SIMULATION AND EXPERIMENTAL INVESTIGATION
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[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (01) : 52 - 62
[9] KINEMATIC THEORY OF CRYSTAL-GROWTH AND DISSOLUTION PROCESSES .2.
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[J]. ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1972, 77 (1-6): : 84 - &
[10] SIMULATION OF SURFACE EVOLUTION DURING ION-BOMBARDMENT
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (04): : 2434 - 2442

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