LOW-PRESSURE DEPOSITION OF DOPED SIO2 BY PYROLYSIS OF TETRAETHYLORTHOSILICATE (TEOS) .2. ARSENIC DOPED FILMS

被引：11

作者：

BECKER, FS

TREICHEL, H

ROHL, S

机构：

来源：

关键词：

D O I：

10.1149/1.2096398

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3033 / 3043

页数：11

共 63 条

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[9] LOW-PRESSURE DEPOSITION OF HIGH-QUALITY SIO2-FILMS BY PYROLYSIS OF TETRAETHYLORTHOSILICATE
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