ELECTRONIC-PROPERTIES OF SOL-GEL-DERIVED OXIDES ON SILICON

被引：26

作者：

WEIMER, RA ^{[1
]}

LENAHAN, PM ^{[1
]}

MARCHIONE, TA ^{[1
]}

BRINKER, CJ ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 15期

关键词：

D O I：

10.1063/1.98725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1179 / 1181

页数：3

共 22 条

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[7] DIELECTRIC AND INTERFACE-STATE MEASUREMENTS OF METAL-SPIN-ON-OXIDE-SILICON CAPACITORS [J].

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[8]

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[9]

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[10]

MA TP, 1979, APPL PHYS LETT, V34, P89

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