DETAILED ANALYSIS OF EDGE EFFECTS IN SIMOX-MOS TRANSISTORS

被引：32

作者：

ELEWA, T

KLEVELAND, B

CRISTOLOVEANU, S

BOUKRISS, B

CHOVET, A

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs (UA-CNRS), Institut National Polytechnique, ENSERG, 38016, Grenoble Cedex

[2] Laboratoire de Physique des Composants à Semiconducteurs (UA-CNRS), Institut National Polytechnique, ENSERG, 38016, Grenoble Cedex

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 04期

关键词：

D O I：

10.1109/16.127478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive investigation of edge effects in LOCOS-isolated silicon on insulator devices is made by combining the measurements of the static characteristics, charge pumping, and noise. Even when a substrate bias is used to mask the conduction on the island edges, the high-frequency edge effects are still detectable. Appropriate models are proposed to separate the edge contribution from those of the front and back interfaces. It is found that the defect density on the edges is inhomogeneous, increasing vertically from the top to the bottom of the film and laterally from the middle to the end of the channel. Slow traps are identified at the back interface, close to the source/drain junctions.

引用

页码：874 / 882

页数：9

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