SPACE-CHARGE EFFECTS IN FOCUSED ION-BEAMS

被引：11

作者：

YAU, YW

GROVES, TR

PEASE, RFW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1141 / 1144

页数：4

共 13 条

[1] ELECTRON-BEAM BROADENING EFFECTS CAUSED BY DISCRETENESS OF SPACE-CHARGE [J].

GROVES, T ;

HAMMOND, DL ;

KUO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1680-1685

[2]

HANSON GR, 1981, 28TH INT FIELD EM S

[3] ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION [J].

KARAPIPERIS, L ;

ADESIDA, I ;

LEE, CA ;

WOLF, ED .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1259-1263

[4]

KLEMPERER O, 1971, ELECT OPTICS, pCH8

[5]

KNAUER W, 1981, OPTIK, V59, P335

[6]

SASAKI T, 1979, C VLSI

[7] FOCUSED ION-BEAMS IN MICROFABRICATION [J].

SELIGER, RL ;

FLEMING, WP .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1416-1422

[8] HIGH-RESOLUTION, ION-BEAM PROCESSES FOR MICROSTRUCTURE FABRICATION [J].

SELIGER, RL ;

KUBENA, RL ;

OLNEY, RD ;

WARD, JW ;

WANG, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1610-1612

[9] FABRICATION OF LATERAL DOPING PROFILES BY A COMPUTER-CONTROLLED FOCUSED ION-BEAM [J].

SELIGER, RL ;

WARD, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1378-1381

[10] HIGH-INTENSITY SCANNING ION PROBE WITH SUBMICROMETER SPOT SIZE [J].

SELIGER, RL ;

WARD, JW ;

WANG, V ;

KUBENA, RL .

APPLIED PHYSICS LETTERS, 1979, 34 (05) :310-312

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