EPITAXIAL-GROWTH OF (100) CDTE ON (100) GAAS INDUCED BY PULSED LASER EVAPORATION

被引：49

作者：

DUBOWSKI, JJ ^{[1
]}

WILLIAMS, DF ^{[1
]}

SEWELL, PB ^{[1
]}

NORMAN, P ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,DIV ELECT ENGN,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 11期

关键词：

D O I：

10.1063/1.95768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1081 / 1083

页数：3

共 24 条

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[17] MOLECULAR-BEAM EPITAXY OF CDTE AND HG1-XCDXTE ON GAAS (100) [J].

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[18] REFLECTIVITY SPECTRA OF MONOCRYSTALLINE CDXHG1-XTE AS A FUNCTION OF COMPOSITION AND TEMPERATURE [J].

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[19] HIGHLY ORIENTED ZNO FILMS GROWN BY LASER EVAPORATION [J].

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[20] ADVANTAGES OF THE HGTE-CDTE SUPER-LATTICE AS AN INFRARED DETECTOR MATERIAL [J].

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