ELECTRON-CONCENTRATION DEPENDENCE OF THE TWO-DIMENSIONAL ELECTRON MOBILITIES IN MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES

被引：7

作者：

HIRAKAWA, K

SAKAKI, H

YOSHINO, J

机构：

来源：

SURFACE SCIENCE | 1986年 / 170卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(86)91001-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：440 / 444

页数：5

共 8 条

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[2]

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[3] MOBILITY MODULATION OF THE TWO-DIMENSIONAL ELECTRON-GAS VIA CONTROLLED DEFORMATION OF THE ELECTRON WAVE-FUNCTION IN SELECTIVELY DOPED ALGAAS-GAAS HETEROJUNCTIONS [J].

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SAKAKI, H ;

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PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1279-1282

[4] CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD [J].

HIRAKAWA, K ;

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YOSHINO, J .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :253-255

[5] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L609-L611

[6] EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES [J].

INOUE, K ;

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APPLIED PHYSICS LETTERS, 1985, 46 (10) :973-975

[7] VELOCITY-MODULATION TRANSISTOR (VMT) - A NEW FIELD-EFFECT TRANSISTOR CONCEPT [J].

SAKAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06) :L381-L383

[8] TRANSPORT-PROPERTIES OF GAAS-ALXGA1-XAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS [J].

TSUI, DC ;

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WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :712-714

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