INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION

被引：74

作者：

DANNEFAER, S

HOGG, B

KERR, D

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.30.3355

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3355 / 3366

页数：12

共 37 条

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