EFFECT OF DOPING ON ELECTRON TRAPS IN METALORGANIC MOLECULAR-BEAM EPITAXIAL GAXIN1-XP/GAAS HETEROSTRUCTURES

被引：41

作者：

PALOURA, EC

GINOUDI, A

KIRIAKIDIS, G

CHRISTOU, A

机构：

[1] UNIV CRETE,DEPT PHYS,GR-71110 HERAKLION,GREECE

[2] INST ELECTR STRUCT & LASERS,FDN RES & TECHNOL,GR-71110 HERAKLION,GREECE

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 24期

关键词：

D O I：

10.1063/1.105760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of trap centers in GaxIn1-xP/GaAs epitaxial layers grown by metal-organic molecular-beam epitaxy is investigated by deep-level transient spectroscopy. The undoped epitaxial layers are characterized by a deep electron trap with an activation energy that depends on the Ga mole fraction and takes values in the range 820 to 875 meV. This trap center is suppressed by S and Si doping, and a new trap at 300-345 meV appears in the doped samples with a capture cross section of 1 X 10(-13)-2 X 10(-15) cm2, while the trap concentration increases with the dopant concentration. Persistent photoconductivity, which is present in all samples investigated, appears to be suppressed only by Si doping.

引用

页码：3127 / 3129

页数：3

共 11 条

[1] ON THE COLLAPSE OF DRAIN I-V-CHARACTERISTICS IN MODULATION-DOPED FETS AT CRYOGENIC TEMPERATURES [J].