THE PROPERTIES AND APPLICATIONS OF LOW-ENERGY PLASMAS

被引:7
作者
CURRAN, JE
机构
关键词
D O I
10.1016/0042-207X(84)90064-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:343 / 345
页数:3
相关论文
共 10 条
[1]  
BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64
[2]  
Chapman B., 1980, GLOW DISCHARGE PROCE
[3]   ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].
COBURN, JW ;
WINTERS, HF .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196
[4]  
DONNELLY VM, 1981, SOLID STATE TECHNOL, V24, P161
[5]  
EPHRATH LM, 1981, J ELECTROCHEM SOC, V128, P2207
[6]  
EPHRATH LM, 1982, J ELECTROCHEM SOC, V129, P2283
[7]   PLASMA CHARACTERIZATION IN SPUTTERING PROCESSES USING THE LANGMUIR PROBE TECHNIQUE [J].
ESER, E ;
OGILVIE, RE ;
TAYLOR, KA .
THIN SOLID FILMS, 1980, 68 (02) :381-392
[8]   PROPERTIES OF PLASMA-ENHANCED CVD SILICON FILMS .1. UNDOPED FILMS DEPOSITED FROM 525-DEGREES-C TO 725-DEGREES-C [J].
KAMINS, TI ;
CHIANG, KL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2326-2331
[9]   LASER-INDUCED FLUORESCENCE-SPECTRUM OF GASEOUS C6H+6 [J].
MILLER, TA ;
BONDYBEY, VE ;
ZEGARSKI, BR .
JOURNAL OF CHEMICAL PHYSICS, 1979, 70 (11) :4982-4985
[10]  
MILLER TA, 1981, PLASMA CHEM PLASMA P, V1, P3