FEATURE SIZE LIMIT OF LIFTOFF METALLIZATION TECHNOLOGY

被引：2

作者：

HOMMA, Y

YAJIMA, A

HARADA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：512 / 517

页数：6

共 9 条

[1] EVAPORATED FILM PROFILES OVER STEPS IN SUBSTRATES [J].

BLECH, IA .

THIN SOLID FILMS, 1970, 6 (02) :113-&

[2]

BLECH IA, 1978, J VAC SCI TECHNOL, V5, P113

[3] POLYIMIDE LIFTOFF TECHNOLOGY FOR HIGH-DENSITY LSI METALLIZATION [J].

HOMMA, Y ;

NOZAWA, H ;

HARADA, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) :552-556

[4]

INADACHI M, 1979, ISSCC, P108

[5]

Logan J. S., 1977, IBM Technical Disclosure Bulletin, V20

[6]

NEUREUTHER AR, 1980, IEEE J SOLID-ST CIRC, V15, P514, DOI 10.1109/JSSC.1980.1051431

[7]

Poulsen R. G., 1976, International Electron Devices Meeting. (Technical digest), P205

[8] NEW TRANSISTOR WITH 2-LEVEL METAL-ELECTRODES [J].

SAIKI, A ;

HARADA, S ;

OKUBO, T ;

MUKAI, K ;

KIMURA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) :1619-1622

[9] METALLIZATION FOR INTEGRATED-CIRCUITS USING A LIFT-OFF TECHNIQUE [J].

WIDMANN, DW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (04) :466-471

← 1 →