PROTON, DEUTERON, AND HELIUM IMPLANTATION INTO GAAS AND LINBO3 FOR WAVE-GUIDE FABRICATION

被引：24

作者：

WILSON, RG

BETTS, DA

SADANA, DK

ZAVADA, JM

HUNSPERGER, RG

机构：

[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402

[2] UNIV CALIFORNIA BERKELEY,BERKELEY,CA 94305

[3] USA,ARMAMENT RES & DEV COMMAND,DOVER,NJ 07801

[4] UNIV DELAWARE,NEWARK,DE 19711

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 11期

关键词：

D O I：

10.1063/1.335275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5006 / 5010

页数：5

共 25 条

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[7] MEASUREMENTS OF LATERAL SPREAD OF HEAVY-IONS IMPLANTED INTO SILICON [J].

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[8] ELECTRICAL-PROPERTIES OF PROTON AND DEUTERIUM ION-IMPLANTED NORMAL-TYPE GAAS [J].

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[9] HIGH FLUENCE DEUTERON BOMBARDMENT OF SILICON [J].

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[10]

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