PASSIVATION IN SILICON

[1] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 918 - 920

[2] Corbett J. W., 1985, Microscopic Identification of Electronic Defects in Semiconductors, P243

[3] CORBETT JW, 1988, IN PRESS DEFECTS ELE

[4] THE SELF-TRAPPING OF HYDROGEN IN SEMICONDUCTORS [J]. PHYSICS LETTERS A, 1988, 126 (07) : 427 - 430

[5] FENG S, IN PRESS

[6] ELECTRIC-FIELD DEPENDENCE OF HYDROGEN NEUTRALIZATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 874 - 876

[7] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 153 - 195

[8] PONCE FA, 1988, MICROSCOPY SEMICONDU

[9] VACANCIES AND THE CHEMICAL TRAPPING OF HYDROGEN IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (14) : 1030 - 1033

[10] POST-HYDROGENATED CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON SCHOTTKY DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5044 - 5051

[1] HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J]. APPLIED PHYSICS LETTERS, 1987, 50 (14) : 918 - 920

[2] Corbett J. W., 1985, Microscopic Identification of Electronic Defects in Semiconductors, P243

[3] CORBETT JW, 1988, IN PRESS DEFECTS ELE

[4] THE SELF-TRAPPING OF HYDROGEN IN SEMICONDUCTORS [J]. PHYSICS LETTERS A, 1988, 126 (07) : 427 - 430

[5] FENG S, IN PRESS

[6] ELECTRIC-FIELD DEPENDENCE OF HYDROGEN NEUTRALIZATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 874 - 876

[7] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 153 - 195

[8] PONCE FA, 1988, MICROSCOPY SEMICONDU

[9] VACANCIES AND THE CHEMICAL TRAPPING OF HYDROGEN IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1979, 43 (14) : 1030 - 1033

[10] POST-HYDROGENATED CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON SCHOTTKY DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5044 - 5051