DC AND MICROWAVE MODELS FOR ALXGA1-XAS/GAAS HIGH ELECTRON-MOBILITY TRANSISTORS

[1] AYASLI Y, 1982, MICROWAVE J, P61

[2] BERGER HH, 1969 IEEE SOL STAT C, P160

[3] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 522 - 527

[4] QUARTER-MICRON GATE LENGTH MICROWAVE HIGH ELECTRON-MOBILITY TRANSISTOR [J]. ELECTRONICS LETTERS, 1983, 19 (21) : 894 - 896

[5] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[6] DiLorenzo J. V., 1982, International Electron Devices Meeting. Technical Digest, P578

[7] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341

[8] PROPERTIES OF SILICON-DOPED A1XGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. THIN SOLID FILMS, 1983, 99 (04) : 391 - 397

[9] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797

[10] HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 455 - 463

[1] AYASLI Y, 1982, MICROWAVE J, P61

[2] BERGER HH, 1969 IEEE SOL STAT C, P160

[3] SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 522 - 527

[4] QUARTER-MICRON GATE LENGTH MICROWAVE HIGH ELECTRON-MOBILITY TRANSISTOR [J]. ELECTRONICS LETTERS, 1983, 19 (21) : 894 - 896

[5] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) : 955 - 960

[6] DiLorenzo J. V., 1982, International Electron Devices Meeting. Technical Digest, P578

[7] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J]. ELECTRON DEVICE LETTERS, 1982, 3 (11): : 338 - 341

[8] PROPERTIES OF SILICON-DOPED A1XGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. THIN SOLID FILMS, 1983, 99 (04) : 391 - 397

[9] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET [J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797

[10] HIGH MOBILITY ELECTRONS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE AND THEIR APPLICATION TO HIGH-SPEED DEVICES [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 455 - 463