PROPERTIES OF SILICON-DOPED A1XGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

FISCHER, R ^{[1
]}

DRUMMOND, TJ ^{[1
]}

THORNE, RE ^{[1
]}

LYONS, WG ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

THIN SOLID FILMS | 1983年 / 99卷 / 04期

关键词：

D O I：

10.1016/0040-6090(83)90066-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：391 / 397

页数：7

共 12 条

[1] AN ANOMALY IN THE RELATION OF HALL-COEFFICIENT TO RESISTIVITY IN N-TYPE ALXGA1-XAS
AYABE, M
MORI, Y
WATANABE, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : L55 - L58
[2] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS
CHAI, YG
WOOD, CEC
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803
[3] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454
[4] DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS OF HEAVILY GE-DOPED GAAS ON MOLECULAR-BEAM EPITAXY GROWTH-PARAMETERS
METZE, GM
STALL, RA
WOOD, CEC
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 165 - 167
[5] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY
MORKOC, H
DRUMMOND, TJ
FISCHER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1030 - 1033
[6] TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
MORKOC, H
CHO, AY
RADICE, C
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4882 - 4884
[7] SHORT-WAVELENGTH CONTINUOUS 300-K PHOTOPUMPED ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASER (LAMBDAL GREATER-THAN-OR-EQUAL-TO-7270 A)
MORKOC, H
DRUMMOND, TJ
CAMRAS, MD
HOLONYAK, N
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 18 - 19
[8] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
MORKOC, H
DRUMMOND, TJ
KOPP, W
FISCHER, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 824 - 826
[9] AN EXPLANATION FOR ANOMALOUS DONOR ACTIVATION-ENERGIES IN AL0.35GA0.65AS
THORNE, RE
DRUMMOND, TJ
LYONS, WG
FISCHER, R
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 189 - 191
[10] THORPE AJS, 1975, J ELECTRON MATER, V4, P101

← 1 2 →