GROWTH OVER NONPLANAR SUBSTRATES BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY

被引：6

作者：

TAMARGO, MC

QUINN, WE

HWANG, DM

CHEN, CY

KAPON, E

SCHIAVONE, LM

BRASIL, MJSP

NAHORY, RE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the growth habits of GaAs and InGaAs quantum wells grown by organometallic molecular-beam epitaxy (OM-MBE) on (100) GaAs substrates with micron-range corrugations aligned along the [011BAR] direction. The growth habits resemble those obtained by molecular-beam epitaxy, but with several obvious differences, which are discussed on the basis of their different growth mechanisms. These differences reduce the importance of the geometric factors for OM-MBE which dominate in MBE. We observe lateral compositional variations in the InGaAs quantum well. The patterned samples exhibit enhanced luminescence efficiency compared to reference flat samples.

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页码：982 / 985

页数：4

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