CAPACITANCE OF LARGE BARRIER SCHOTTKY DIODES

被引：12

作者：

GREEN, MA ^{[1
]}

机构：

[1] UNIV NEW S WALES,DEPT SOLID-STATE ELECTR,KENSINGTON,NEW S WALES,AUSTRALIA

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 05期

关键词：

D O I：

10.1016/0038-1101(76)90082-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：421 / 422

页数：2

共 10 条

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[2] MINORITY-CARRIER MIS TUNNEL-DIODES AND THEIR APPLICATION TO ELECTRON-VOLTAIC AND PHOTO-VOLTAIC ENERGY-CONVERSION .1. THEORY [J].

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SOLID-STATE ELECTRONICS, 1974, 17 (06) :551-561

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[4] PLANAR EPITAXIAL SILICON SCHOTTKY BARRIER DIODES [J].

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[5]

KAR S, 1972, SOLID STATE ELECTRON, V15, P211

[6] HIGH-FREQUENCY SPACE-CHARGE LAYER CAPACITANCE OF STRONGLY INVERTED SEMICONDUCTOR SURFACES [J].

MCNUTT, MJ ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1974, 17 (04) :377-385

[7] HAFNIUM-SILICON SCHOTTKY BARRIERS - LARGE BARRIER HEIGHT ON PARA-TYPE SILICON AND OHMIC BEHAVIOR ON TYPE SILICON [J].

SAXENA, AN .

APPLIED PHYSICS LETTERS, 1971, 19 (03) :71-+

[8] THE SURFACE-BARRIER TRANSISTOR .5. THE PROPERTIES OF METAL TO SEMICONDUCTOR CONTACTS [J].

SCHWARZ, RF ;

WALSH, JF .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1953, 41 (12) :1715-1720

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10] METAL-SILICON SCHOTTKY BARRIERS [J].

TURNER, MJ ;

RHODERICK, EH .

SOLID-STATE ELECTRONICS, 1968, 11 (03) :291-+

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