RAMAN STUDIES OF THE P-LOCAL MODE VIBRATION IN P-IMPLANTED, LASER ANNEALED GE

被引：10

作者：

CONTRERAS, G ^{[1
]}

COMPAAN, A ^{[1
]}

AXMANN, A ^{[1
]}

机构：

[1] FRAUNHOFER INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1983530

中图分类号：

学科分类号：

摘要：

引用

页码：193 / 195

页数：3

共 9 条

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[8] THE ELECTRONIC-STRUCTURE OF HEAVILY DOPED ION-IMPLANTED LASER ANNEALED SILICON - ELLIPSOMETRIC MEASUREMENTS [J].

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