DAMAGED DEPTH IN GAAS PROCESSED BY AR PLASMA-ETCHING

被引：12

作者：

HIDAKA, H ^{[1
]}

AKITA, K ^{[1
]}

TANEYA, M ^{[1
]}

SUGIMOTO, Y ^{[1
]}

机构：

[1] OPTOELECTR TECHNOL RES LAB, TSUKUBA 30026, JAPAN

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 15期

关键词：

Gallium arsenide;

D O I：

10.1049/el:19900719

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The damaged depths in GaAs processed by Ar plasma etching under various applied radio-frequency (RF) voltages and Ar pressures in a parallel-plate type apparatus were studied. The damaged depth was evaluated in terms of the chemically etched thickness at which the photoluminescence intensity recovers. The damaged depth decreased as the applied radio frequency peak voltage was decreased. The depth was extraordinarily deep in the lower radio frequency voltage region. The effect of Ar pressure on damaged depth was small in the range from 1 to 10 Pa. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1112 / 1113

页数：2

共 8 条

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