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EVALUATION OF INTERFACE PARAMETERS IN MIS STRUCTURES .1. THEORY
被引:2
作者
:
DEGRYSE, R
论文数:
0
引用数:
0
h-index:
0
机构:
RIJKS UNIV GHENT,LAB KRISTALLOG STUDIE VASTE STOF,KRIJGSLAAN 271,B-9000 GHENT,BELGIUM
RIJKS UNIV GHENT,LAB KRISTALLOG STUDIE VASTE STOF,KRIJGSLAAN 271,B-9000 GHENT,BELGIUM
DEGRYSE, R
[
1
]
VLAMINCK, R
论文数:
0
引用数:
0
h-index:
0
机构:
RIJKS UNIV GHENT,LAB KRISTALLOG STUDIE VASTE STOF,KRIJGSLAAN 271,B-9000 GHENT,BELGIUM
RIJKS UNIV GHENT,LAB KRISTALLOG STUDIE VASTE STOF,KRIJGSLAAN 271,B-9000 GHENT,BELGIUM
VLAMINCK, R
[
1
]
VENNIK, J
论文数:
0
引用数:
0
h-index:
0
机构:
RIJKS UNIV GHENT,LAB KRISTALLOG STUDIE VASTE STOF,KRIJGSLAAN 271,B-9000 GHENT,BELGIUM
RIJKS UNIV GHENT,LAB KRISTALLOG STUDIE VASTE STOF,KRIJGSLAAN 271,B-9000 GHENT,BELGIUM
VENNIK, J
[
1
]
机构
:
[1]
RIJKS UNIV GHENT,LAB KRISTALLOG STUDIE VASTE STOF,KRIJGSLAAN 271,B-9000 GHENT,BELGIUM
来源
:
SOLID-STATE ELECTRONICS
|
1975年
/ 18卷
/ 02期
关键词
:
D O I
:
10.1016/0038-1101(75)90098-2
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:151 / 159
页数:9
相关论文
共 16 条
[1]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[2]
ADMITTANCE OF AN MOS DEVICE WITH INTERFACE CHARGE INHOMOGENEITIES
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(08)
: 3451
-
&
[3]
SURFACE POTENTIAL FLUCTUATIONS GENERATED BY INTERFACE CHARGE INHOMOGENEITIES IN MOS DEVICES
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(05)
: 2306
-
&
[4]
DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
[J].
SURFACE SCIENCE,
1971,
28
(01)
: 157
-
+
[5]
DEGRYSE R, TO BE PUBLISHED
[6]
INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
论文数:
0
引用数:
0
h-index:
0
DEULING, H
KLAUSMANN, E
论文数:
0
引用数:
0
h-index:
0
KLAUSMANN, E
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(05)
: 559
-
+
[7]
ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN SI-SIO2 INTERFACES
FAHRNER, W
论文数:
0
引用数:
0
h-index:
0
FAHRNER, W
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(01)
: 16
-
+
[8]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[9]
SILICON-SILICON DIOXIDE SYSTEM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, N.Y.
GRAY, PV
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(09)
: 1543
-
+
[10]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
←
1
2
→
共 16 条
[1]
SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
论文数:
0
引用数:
0
h-index:
0
BERGLUND, CN
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1966,
ED13
(10)
: 701
-
+
[2]
ADMITTANCE OF AN MOS DEVICE WITH INTERFACE CHARGE INHOMOGENEITIES
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(08)
: 3451
-
&
[3]
SURFACE POTENTIAL FLUCTUATIONS GENERATED BY INTERFACE CHARGE INHOMOGENEITIES IN MOS DEVICES
BREWS, JR
论文数:
0
引用数:
0
h-index:
0
BREWS, JR
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(05)
: 2306
-
&
[4]
DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS
CASTAGNE, R
论文数:
0
引用数:
0
h-index:
0
CASTAGNE, R
VAPAILLE, A
论文数:
0
引用数:
0
h-index:
0
VAPAILLE, A
[J].
SURFACE SCIENCE,
1971,
28
(01)
: 157
-
+
[5]
DEGRYSE R, TO BE PUBLISHED
[6]
INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
论文数:
0
引用数:
0
h-index:
0
DEULING, H
KLAUSMANN, E
论文数:
0
引用数:
0
h-index:
0
KLAUSMANN, E
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(05)
: 559
-
+
[7]
ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN SI-SIO2 INTERFACES
FAHRNER, W
论文数:
0
引用数:
0
h-index:
0
FAHRNER, W
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(01)
: 16
-
+
[8]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
[J].
APPLIED PHYSICS LETTERS,
1966,
8
(02)
: 31
-
&
[9]
SILICON-SILICON DIOXIDE SYSTEM
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Research and Development Center, Schenectady, N.Y.
GRAY, PV
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(09)
: 1543
-
+
[10]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
←
1
2
→