PD OVERLAYER GROWTH ON INP(110), GAAS(110), AND INSB(110) - COMPARISONS OF ANION SURFACE SEGREGATION

被引：17

作者：

VITOMIROV, IM

ALDAO, CM

LIN, ZD

GAO, Y

TRAFAS, BM

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.38.10776

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10776 / 10786

页数：11

共 37 条

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