NOVEL LIQUID PRECURSORS FOR THE GROWTH OF INP AND GAINAS EPITAXIAL LAYERS BY MOVPE

被引：13

作者：

SCHOLZ, F ^{[1
]}

MOLASSIOTI, A ^{[1
]}

MOSER, M ^{[1
]}

NOTHEISEN, B ^{[1
]}

STREUBEL, K ^{[1
]}

HOSTALEK, M ^{[1
]}

POHL, L ^{[1
]}

机构：

[1] E MERCK AG,W-6100 DARMSTADT 1,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90487-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The two novel liquid In precursors TMIn-HN(i)Pr2 and (3-dimethylaminopropyl)dimethylindium (DADI) were synthesized and their behaviour in the MOVPE growth of InP studied. Layers with low temperature mobilities in excess of 100,000 cm2/V.s could be grown. When growing GaInAs, some side reactions between TMIn-HN(i)Pr2 and AsH3 were observed, which did not significantly affect the layer quality. DADI could be used in combination with tertiarybutylphosphine resulting in acceptable InP quality at moderate growth temperatures.

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收藏

页码：365 / 369

页数：5

相关论文

共 13 条

[1] A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V-COMPOUNDS [J].

CHATTERJEE, AK ;

FAKTOR, MM ;

MOSS, RH ;

WHITE, EAD .

JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :491-503

[2] REACTIONS OF PHOSPHINE WITH TRIMETHYLINDIUM [J].

DIDCHENKO, R ;

ALIX, JE ;

TOENISKOETTER, RH .

JOURNAL OF INORGANIC & NUCLEAR CHEMISTRY, 1960, 14 (1-2) :35-37

[3] NOVEL ORGANOMETALLIC STARTING MATERIALS FOR GROUP-III-V SEMICONDUCTOR METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

HOSTALEK, M ;

POHL, L ;

BRAUERS, A ;

BALK, P ;

FRESE, V ;

HARDTDEGEN, H ;

HOVEL, R ;

REGEL, GK ;

MOLASSIOTI, A ;

MOSER, M ;

SCHOLZ, F .

THIN SOLID FILMS, 1989, 174 :1-4

[4] COMPARISON OF ETHYLDIMETHYLINDIUM (EDMIN) AND TRIMETHYLINDIUM (TMIN) FOR GAINAS AND INP GROWTH BY LP-MOVPE [J].

KNAUF, J ;

SCHMITZ, D ;

STRAUCH, G ;

JURGENSEN, H ;

HEYEN, M ;

MELAS, A .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :34-40

[5] ME3IN PREPARATION AND ZONE-REFINING OF ADDUCTS FOR HIGH-QUALITY INP AND GAINAS MOVPE [J].

LAUBE, G ;

KOHLER, U ;

WEIDLEIN, J ;

SCHOLZ, F ;

STREUBEL, K ;

DIETER, RJ ;

KARL, N ;

GERDON, M .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :45-51

[6] THE GROWTH AND CHARACTERIZATION OF UNIFORM GA1-XINXAS (X LESS-THAN-OR-EQUAL-TO .25) BY ORGANO-METALLIC VPE [J].

LUDOWISE, MJ ;

COOPER, CB ;

SAXENA, RR .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :1051-1068

[7] GROWTH OF INDIUM-PHOSPHIDE BY METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYL (3-DIMETHYLAMINOPROPYL) INDIUM AS A NEW INDIUM SOURCE [J].

MOLASSIOTI, A ;

MOSER, M ;

STAPOR, A ;

SCHOLZ, F ;

HOSTALEK, M ;

POHL, L .

APPLIED PHYSICS LETTERS, 1989, 54 (09) :857-858

[8] HIGH-QUALITY INP LAYERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY USING TERTIARYBUTYLPHOSPHINE AND PHOSPHINE [J].

SAXENA, RR ;

FOUQUET, JE ;

SARDI, VM ;

MOON, RL .

APPLIED PHYSICS LETTERS, 1988, 53 (04) :304-306

[9]

SCHOLZ F, 1990, I PHYS C SER, V106, P45

[10] INFLUENCE OF DIFFERENT GROWTH TECHNIQUES ON THE QUALITY OF GAINAS-INP QUANTUM WELL STRUCTURES GROWN BY ADDUCT-MOVPE [J].

STREUBEL, K ;

SCHOLZ, F ;

LAUBE, G ;

DIETER, RJ ;

ZIELINSKI, E ;

KEPPLER, F .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :347-352