ELECTROOPTICAL MEASUREMENT OF HIGH-FIELD CONDUCTIVITY IN DELTA-DOPED GAAS EPITAXIAL LAYERS

被引：2

作者：

BALYNAS, Y

KROTKUS, A

LIDEIKIS, T

STALNIONIS, A

TREIDERIS, G

机构：

[1] Semiconductor Physics Institute, Lithuanian Academy of Sciences, Vilnius

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 01期

关键词：

ELECTROOPTICS; MEASUREMENT; CONDUCTIVITY;

D O I：

10.1049/el:19910002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electro-optical sampling technique for high-field conductivity measurement was proposed and electron drift velocity in delta-doped GaAs samples was measured.

引用

页码：2 / 3

页数：2

共 7 条

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