IMAGING OF LOW-LOAD INDENTATIONS INTO SI AND GAAS BY SCANNING TUNNELING MICROSCOPY

被引：10

作者：

CASTELL, MR

WALLS, MG

HOWIE, A

机构：

[1] Microstructural Physics, Cavendish Laboratory, Cambridge, CB3 0HE, Madingley Road

来源：

ULTRAMICROSCOPY | 1992年 / 42卷

关键词：

D O I：

10.1016/0304-3991(92)90471-U

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Scanning tunneling microscopy (STM) images have been obtained in air of Berkovich indentations into Si(100), load range 2 to 25 mN, and into GaAs(100) at loads of 7 and 20 mN. The sides of the Si indentations appeared to be bowed inwards in contrast with the GaAs sides which appeared to be flat. Studies of hardness values were made using STM data and load-versus-depth curves from a nano-indenter. Tunneling spectroscopy results from both the Si indentation region and the undamaged surface indicate amorphisation of the deformed material.

引用

页码：1490 / 1497

页数：8

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