A MODIFIED LIGHTLY DOPED DRAIN STRUCTURE FOR VLSI MOSFETS

被引：10

作者：

BAMPI, S

PLUMMER, JD

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1769 / 1779

页数：11

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