TIME-RESOLVED PHOTOLUMINESCENCE OF POROUS SILICON - EVIDENCE FOR TUNNELING LIMITED RECOMBINATION IN A BAND OF LOCALIZED STATES

被引：43

作者：

TESSLER, LR

ALVAREZ, F

TESCHKE, O

机构：

[1] Departamento de Física Aplicada, IFGW, UNICAMP, 13081-970 Campinas, SP

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time resolved photoluminescence of porous silicon at room temperature was measured for several emission energies under 2 ns nitrogen laser excitation. For each emission energy studied there is a broad distribution of lifetimes extending over a few decades. The mean value of the distribution varies with the emission energy, from 3 (2.77 eV) to 50 mus (1.96 eV). The results can be explained by assuming a tunneling limited recombination mechanism between bands of localized states. We associate this behavior with a superficial disordered Si:O:H compound rather than with quantum confinement effects.

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页码：2381 / 2383

页数：3

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