INSTABILITY OF SLOW SOLID-LIQUID INTERFACE RELAXATION BEFORE THE HETERO-LPE OF III-V COMPOUNDS

被引:14
作者
BOLKHOVITYANOV, YB
CHIKICHEV, SI
机构
关键词
D O I
10.1002/crat.2170180702
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:847 / 857
页数:11
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共 41 条
[1]   LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INASXSB1-X AND IN1-YGAYSB ON (111)B INSB SUBSTRATES [J].
ABROKWAH, JK ;
GERSHENZON, M .
JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (02) :379-421
[2]   IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE [J].
AKIBA, S ;
SAKAI, K ;
YAMAMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (10) :1899-1900
[3]   LIQUID-PHASE EPITAXY OF INXGA1-XAS [J].
ANTYPAS, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) :1393-&
[4]   1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE [J].
ARAI, S ;
SUEMATSU, Y ;
ITAYA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (03) :709-710
[5]   SUBSTRATE INSTABILITY DURING THE LPE GROWTH OF (GA,IN) AS ALLOYS ON INAS SUBSTRATES [J].
ASTLES, MG ;
DOSSER, OD ;
MACLEAN, AJ ;
WRIGHT, PJ .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :485-492
[6]  
BARANOV AN, 1981, SOV INORG MATER, V17, P402
[7]   STUDY OF INXGA1-XP/GAAS FILMS FORMATION ON THE BASIS OF IN-GA-P LIQUIDUS PRECISED INVESTIGATION [J].
BOLKHOVITYANOV, YB .
CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (12) :1483-1489
[8]   THE PECULIARITIES OF ISOTHERMAL CONTACT OF LIQUID AND SOLID-PHASE DURING THE LPE OF A3B5 COMPOUNDS [J].
BOLKHOVITYANOV, YB .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :591-598
[10]   INVESTIGATION OF GAAS-INYGA1-YPZAS1-Z-INXGA1-XAS GRADING HETEROJUNCTIONS FORMATION [J].
BOLKHOVITYANOV, YB ;
BOLKHOVITYANOVA, RI ;
YUDAEV, VI .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (04) :387-394