PHOTOVOLTAIC PROPERTIES OF ANISOTROPIC RELAXATION SEMICONDUCTORS

被引：11

作者：

SCHETZINA, JF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27607

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.12.3339

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3339 / 3352

页数：14

共 59 条

[41]

Pankove J. I., 1971, OPTICAL PROCESSES SE

[42] HIGH-VOLTAGE PHOTOVOLTAIC EFFECT [J].

PENSAK, L .

PHYSICAL REVIEW, 1958, 109 (02) :601-601

[43] MINORITY-CARRIER INJECTION IN RELAXATION SEMICONDUCTORS [J].

POPESCU, C ;

HENISCH, HK .

PHYSICAL REVIEW B, 1975, 11 (04) :1563-1568

[44] CARRIER TRANSPORT AND POTENTIAL DISTRIBUTIONS FOR A SEMICONDUCTOR P-N JUNCTION IN RELAXATION REGIME [J].

QUEISSER, HJ ;

CASEY, HC ;

VANROOSB.W .

PHYSICAL REVIEW LETTERS, 1971, 26 (10) :551-&

[45] RECOMBINATION PROCESSES IN INSULATORS AND SEMICONDUCTORS [J].

ROSE, A .

PHYSICAL REVIEW, 1955, 97 (02) :322-333

[46]

RYVKIN SM, 1964, PHOTOELECTRIC EFFECT, P116

[47] STEADY-STATE TRANSPORT IN TRAP-DOMINATED RELAXATION SEMICONDUCTORS [J].

SCHETZINA, JF .

PHYSICAL REVIEW B, 1975, 11 (12) :4994-4998

[48] EXCESS-CARRIER TRANSPORT IN ANISOTROPIC SEMICONDUCTOR - PHOTOVOLTAIC EFFECT [J].

SHAH, RM ;

SCHETZINA, JF .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (10) :4014-+

[49] TRANSIENT PHOTOVOLTAIC EFFECTS IN ANISOTROPIC SEMICONDUCTORS [J].

SUBRAMAN.A ;

GORDON, SJ ;

SCHETZIN.JF .

PHYSICAL REVIEW B, 1974, 9 (02) :536-544

[50] MECHANISM OF PHOTOVOLTAIC EFFECT OF GE FILM OBLIQUELY DEPOSITED IN VACUUM [J].

TAKAHASHI, M ;

KOU, F ;

TADA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (12) :1446-+

← 1 2 3 4 5 6 →