Metal-organic chemical vapor deposition of semiconducting III/VI In2Se3 thin films form the single-source precursor: In[SeC(SiMe(3))(3)](3)

被引：36

作者：

Cheon, JW ^{[1
]}

Arnold, J ^{[1
]}

Yu, KM ^{[1
]}

Bourret, ED ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT CHEM,BERKELEY,CA 94720

来源：

CHEMISTRY OF MATERIALS | 1995年 / 7卷 / 12期

关键词：

D O I：

10.1021/cm00060a014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe(3))(3)](3) as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).

引用

页码：2273 / 2276

页数：4

共 37 条

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