THE KINETICS OF SILICON DIOXIDE CHEMICAL VAPOR-DEPOSITION .2. THE MODEL OF THE PROCESS

被引：6

作者：

GRABIEC, PB ^{[1
]}

PRZYLUSKI, J ^{[1
]}

机构：

[1] WARSAW TECH UNIV,INST GEN CHEM & INORGAN TECHNOL,PL-00663 WARSAW,POLAND

来源：

SURFACE TECHNOLOGY | 1985年 / 25卷 / 04期

关键词：

D O I：

10.1016/0376-4583(85)90083-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：315 / 325

页数：11

共 11 条

[1]

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[2]

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PAVELESCU, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) :1888-1893

[4] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR [J].

EVERSTEYN, FC ;

SEVERIN, PJW ;

BREKEL, CHJV ;

PEEK, HL .

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[5]

EVERSTEYN FC, 1974, PHILIPS RES REP, V29, P45

[6] THE KINETICS OF SILICON DIOXIDE CHEMICAL VAPOR-DEPOSITION .1. SURFACE CHEMICAL-REACTIONS [J].

GRABIEC, PB ;

PRZYLUSKI, J .

SURFACE TECHNOLOGY, 1985, 25 (04) :307-313

[7] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION FOR VERY LARGE-SCALE INTEGRATION PROCESSING - REVIEW [J].

KERN, W ;

SCHNABLE, GL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :647-657

[8]

Korec J., 1977, Electron Technology, V10, P3

[9]

Pohorecki R., 1979, KINETYKA TERMODYNAMI

[10] FILMS FROM THE LOW-TEMPERATURE OXIDATION OF SILANE [J].

TAFT, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) :1728-1731

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