HIGH-RESOLUTION X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF THIN SIO2 AND SI/SIO2 INTERFACES

被引：40

作者：

HATTORI, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586964

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The important results for the control of the SiO2/Si interface structure in atomic scale have been obtained recently. In the present article the structural imperfections in the ultrathin oxide, which cannot be determined uniquely by x-ray photoemission spectroscopy, in addition to the early stage of interface formation are discussed. The Si 2p photoelectron spectra arising from Si-Si bonds in the oxide near the interface were confirmed from the measurement of reflectance in vacuum ultraviolet. The Si 2p photoelectron spectra arising from Si-H bonds in the oxide were confirmed by multiple internal reflection infrared absorption spectroscopy.

引用

页码：1528 / 1532

页数：5

共 32 条

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