LOW-PRESSURE OMVPE OF GAAS USING TRIETHYLGALLIUM

[1] BHAT R, 1982, I PHYS C SER, V63, P101

[2] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[3] NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 181 - 186

[4] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[5] THE GROWTH OF GAAS AT REDUCED PRESSURE IN AN ORGANOMETALLIC CVD SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 581 - 588

[6] A RE-EXAMINATION OF BOUNDARY-LAYER THEORY FOR A HORIZONTAL CVD REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 619 - 622

[7] HORIGUCHI S, 1986, I PHYS C SER, V79, P157

[8] JUZA J, 1982, J ELECTROCHEM SOC, V129, P1627, DOI 10.1149/1.2124222

[9] SELECTIVE EMBEDDED GROWTH OF ALXGA1-XAS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L10 - L12

[10] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 73 - 76

[1] BHAT R, 1982, I PHYS C SER, V63, P101

[2] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[3] NEW METHOD FOR THE GROWTH OF GAAS EPILAYER AT LOW H-2 PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 181 - 186

[4] DUCHEMIN JP, 1978, J ELECTROCHEM SOC, V125, P637

[5] THE GROWTH OF GAAS AT REDUCED PRESSURE IN AN ORGANOMETALLIC CVD SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 581 - 588

[6] A RE-EXAMINATION OF BOUNDARY-LAYER THEORY FOR A HORIZONTAL CVD REACTOR [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 619 - 622

[7] HORIGUCHI S, 1986, I PHYS C SER, V79, P157

[8] JUZA J, 1982, J ELECTROCHEM SOC, V129, P1627, DOI 10.1149/1.2124222

[9] SELECTIVE EMBEDDED GROWTH OF ALXGA1-XAS BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L10 - L12

[10] SELECTIVE EPITAXIAL-GROWTH OF GAAS BY LOW-PRESSURE MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) : 73 - 76