FORMATION AND DAMAGE OF SIDEWALLS AFTER CL2/CH4 BASED REACTIVE ION-BEAM OF INP

被引：13

作者：

VANROIJEN, R

BULLELIEUWMA, CWT

MONTIE, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 05期

关键词：

D O I：

10.1116/1.586187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The cause of anisotropic etching of a reactive ion etching (RIE) process for InP/InGaAsP involving a mixture of Cl2, Ar, CH4, and H-2 is investigated, applying Auger photoelectron spectroscopy and transmission electron spectroscopy. The extend of sidewall damage is given. An InP/InGaAsP heterostructure quantum wirelike structure is fabricated and the effect on the photoluminescence intensity and wavelength is reported. Successful device fabrication using RIE is demonstrated.

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页码：2188 / 2191

页数：4

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