LEAD TELLURIDE LEAD TIN TELLURIDE HETEROJUNCTION DIODE ARRAY

被引：30

作者：

WANG, CC ^{[1
]}

HAMPTON, SR ^{[1
]}

机构：

[1] AEROJET ELECTROSYST CO,AZUSA,CA 91702

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 02期

关键词：

D O I：

10.1016/0038-1101(75)90095-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：121 / &

共 16 条

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[3]

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[4] PB1-XSNXTE PHOTOVOLTAIC DIODES AND DIODE LASERS PRODUCED BY PROTON BOMBARDMENT [J].

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HARMAN, TC .

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[5] P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION [J].

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LINDLEY, WT ;

FOYT, AG ;

HARMAN, TC .

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[6] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J].

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[7]

HARMAN TC, 1972, MAR C PHYS IV VI COM

[8] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].

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SUMSKI, S .

APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&

[9] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE [J].

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HARRIS, JS ;

CHU, JC ;

GERTNER, ER .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) :107-&

[10]

Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]

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