MEASUREMENTS OF THE ENERGY-DEPENDENCE OF ELECTRON-BEAM ASSISTED ETCHING OF, AND DEPOSITION ON, SILICA

被引：14

作者：

FUJIOKA, H ^{[1
]}

NAKAMAE, K ^{[1
]}

HIROTA, M ^{[1
]}

URA, K ^{[1
]}

TAMURA, N ^{[1
]}

TAKAGI, T ^{[1
]}

机构：

[1] JEOL LTD, TOKYO 196, JAPAN

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1990年 / 23卷 / 02期

关键词：

D O I：

10.1088/0022-3727/23/2/023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron beam assisted etch rates for SiO2by using XeF2and CF4gases were measured as a function of primary electron energy. The deposition rate of Fe on SiO2substrate with Fe(CO)5as a source gas was also measured. It is seen that both the etch rate and the deposition rate are higher at lower primary electron energies in the region of 1 keV to 15 keV. © 1990 IOP Publication Ltd.

引用

页码：266 / 268

页数：3

共 7 条

[1] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].