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CORRELATED FLUCTUATIONS AND NOISE SPECTRA OF TUNNELING AND SUBSTRATE CURRENTS BEFORE BREAKDOWN IN THIN-OXIDE MOS DEVICES

被引：16
作者：
SALETTI, R
NERI, B
OLIVO, P
MODELLI, A
机构：
[1] UNIV PISA,IST ELETTR & TELECOMUN,I-56100 PISA,ITALY
[2] UNIV BOLOGNA,DIPARTIMENTO ELETTR INFORMAT & SISTEMIST,I-40126 BOLOGNA,ITALY
[3] SGS THOMSON MICROELECTR,I-20041 AGRATE BRIANZA,ITALY
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 11期
关键词：
D O I：
10.1109/16.62302
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fluctuations of the tunnel and substrate currents in thin-oxide MOS devices biased at high fields have been investigated. It has been shown that both the currents are characterized by multi-level random fluctuations which are sometimes correlated. The correlation is complete before breakdown. © 1990 IEEE
引用
收藏
页码：2411 / 2413
页数：3
相关论文
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