A PRELIMINARY-STUDY OF IMPURITIES AND DEFECTS IN SI-MBE LAYERS

被引：8

作者：

HOUGHTON, RF

PATEL, G

LEONG, WY

WHALL, TE

PARKER, EHC

KUBIAK, RAA

NAYLER, R

机构：

[1] VG SEMICON,E GRINSTEAD RH19 2JQ,SURREY,ENGLAND

[2] GEC HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90412-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：326 / 331

页数：6

共 12 条

[1]

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APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (02) :73-82

[3]

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[4]

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[8] ACCELERATED ION DOPING IN SI MBE [J].

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[9] DEFECT EVALUATION OF SI MBE FILM [J].

OTA, Y .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :439-448

[10] ROLE OF METALLIC CONTAMINATION IN FORMATION OF SAUCER PIT DEFECTS IN EPITAXIAL SILICON [J].

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