DEFECT EVALUATION OF SI MBE FILM

被引:11
作者
OTA, Y
机构
关键词
D O I
10.1016/0022-0248(83)90172-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:439 / 448
页数:10
相关论文
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[1]  
ARCHER VD, 1982, SPR EL SOC M MONTR
[2]   LOW BARRIER HEIGHT SCHOTTKY MIXER DIODE USING SUPER THIN SILICON FILMS BY MOLECULAR-BEAM EPITAXY [J].
BALLAMY, WC ;
OTA, Y .
APPLIED PHYSICS LETTERS, 1981, 39 (08) :629-630
[3]   SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS [J].
BEAN, JC ;
SADOWSKI, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02) :137-142
[4]  
BEAN JC, 1981, DOPING PROCESSES SIL, pCH4
[5]   ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICON [J].
BOOKER, GR ;
STICKLER, R .
APPLIED PHYSICS LETTERS, 1963, 3 (09) :158-160
[6]   STACKING-FAULT DEFECTS IN EPITAXIAL SILICON LAYERS [J].
BOOKER, GR .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :441-+
[7]  
DARGONA FS, 1972, J ELECTROCHEM SOC, V119, P948
[8]   APPLICATION OF SI MBE TO MICROWAVE HYPERABRUPT DIODES [J].
GOODWIN, CA ;
OTA, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1796-1799
[9]   SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY [J].
HENDERSON, RC ;
HELM, RF .
SURFACE SCIENCE, 1972, 30 (02) :310-+
[10]   FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].
HU, SM .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573