OBSERVATION AND SIMULATION OF FOCUSED ION-BEAM-INDUCED DAMAGE

被引:23
作者
VIEU, C
BENASSAYAG, G
GIERAK, J
机构
[1] Laboratoire de Microélectronique et de Microstructures, CNRS, 92225 Bagneux Cedex
关键词
D O I
10.1016/0168-583X(94)95632-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Theoretical calculations of focused ion beam implantation induced damage are compared to cross-sectional transmission electron microscopy observations of amorphous zones. The calculation takes into account a depth dependent lateral straggling of the defect distribution and arbitrary current distributions within the ion spot including asymmetry and tails. At high emission current of the ion source, an expression of the current profile involving two Gaussians to describe the core and the tails of the probe was found to fit perfectly the experimental features. The potential application of this procedure for the characterization of ion spots is discussed.
引用
收藏
页码:439 / 446
页数:8
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