ENERGY-LEVELS FOR PLATINUM AND PALLADIUM IN SILICON MEASURED BY DARK TRANSIENT CAPACITANCE TECHNIQUE

被引：18

作者：

PUGNET, M ^{[1
]}

BARBOLLA, J ^{[1
]}

BRABANT, JC ^{[1
]}

STYVES, F ^{[1
]}

BROUSSEAU, M ^{[1
]}

机构：

[1] INST NATL SCI APPL,DEPT PHYS,CNRS,PHYS SOLIDES LAB,F-31077 TOULOUSE,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 35卷 / 02期

关键词：

D O I：

10.1002/pssa.2210350215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：533 / 543

页数：11

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