THERMAL-OXIDATION OF SILICON-NITRIDE AND SILICON OXYNITRIDE FILMS

被引：39

作者：

KUIPER, AET ^{[1
]}

WILLEMSEN, MFC ^{[1
]}

MULDER, JML ^{[1
]}

ELFERINK, JBO ^{[1
]}

HABRAKEN, FHPM ^{[1
]}

VANDERWEG, WF ^{[1
]}

机构：

[1] STATE UNIV UTRECHT,DEPT ATOM & INTERFACE PHYS,3508 TA UTRECHT,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：455 / 465

页数：11

共 25 条

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[3]

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[6]

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[8]

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[9] CHARACTERIZATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AND THERMALLY GROWN SILICON-NITRIDE FILMS [J].

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[10] HYDROGEN IN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON (OXY)NITRIDE FILMS [J].

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TIJHAAR, RHG ;

VANDERWEG, WF ;

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WILLEMSEN, MFC .

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