HIGH ELECTRON-MOBILITY TRANSISTORS

[1] Abe M., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P158

[2] NEW TECHNOLOGY TOWARDS GAAS LSI VLSI FOR COMPUTER-APPLICATIONS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 992 - 998

[3] Asbeck P. M., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P133

[4] HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE) GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L654 - L656

[5] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629

[6] Berenz J. J., 1984, IEEE 1984 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No. 84CH2042-0), P83

[7] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149

[8] QUARTER MICRON LOW-NOISE GAAS-FETS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 401 - 403

[9] CIRILLO NC, 1985, DRC BOULDER

[10] SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1981, 17 (17) : 606 - 608

[1] Abe M., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P158

[2] NEW TECHNOLOGY TOWARDS GAAS LSI VLSI FOR COMPUTER-APPLICATIONS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 992 - 998

[3] Asbeck P. M., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P133

[4] HIGH-PERFORMANCE (ALAS/N-GAAS SUPERLATTICE) GAAS 2DEGFETS WITH STABILIZED THRESHOLD VOLTAGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L654 - L656

[5] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L627 - L629

[6] Berenz J. J., 1984, IEEE 1984 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers (Cat. No. 84CH2042-0), P83

[7] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 147 - 149

[8] QUARTER MICRON LOW-NOISE GAAS-FETS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 401 - 403

[9] CIRILLO NC, 1985, DRC BOULDER

[10] SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1981, 17 (17) : 606 - 608