HIGH ELECTRON-MOBILITY TRANSISTORS

[31] INOUE T, 1983, JPN J APPL PHYS S221, V22, P357

[32] ISHIKAWA T, 1984, 16TH C SOL STAT DEV, P603

[33] JOSHIN K, 1984, 16TH C SOL STAT DEV, P347

[34] JOSHIN K, 1983, IEEE MTT S, P563

[35] Kamei K., 1980, International Electron Devices Meeting. Technical Digest, P102

[36] KAMEI K, 1985, I PHYS C SER, V74, P545

[37] KAMEI K, 1985, 12TH INT S GAAS REL, P41

[38] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277

[39] KOBAYASHI N, 1984, ELECTRON LETT, V20, P887, DOI 10.1049/el:19840602

[40] TDEG IN IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY CHLORIDE VPE [J]. ELECTRONICS LETTERS, 1983, 19 (13) : 473 - 474

[31] INOUE T, 1983, JPN J APPL PHYS S221, V22, P357

[32] ISHIKAWA T, 1984, 16TH C SOL STAT DEV, P603

[33] JOSHIN K, 1984, 16TH C SOL STAT DEV, P347

[34] JOSHIN K, 1983, IEEE MTT S, P563

[35] Kamei K., 1980, International Electron Devices Meeting. Technical Digest, P102

[36] KAMEI K, 1985, I PHYS C SER, V74, P545

[37] KAMEI K, 1985, 12TH INT S GAAS REL, P41

[38] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277

[39] KOBAYASHI N, 1984, ELECTRON LETT, V20, P887, DOI 10.1049/el:19840602

[40] TDEG IN IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY CHLORIDE VPE [J]. ELECTRONICS LETTERS, 1983, 19 (13) : 473 - 474