PHOTOINDUCED INTERSUBBAND ADSORPTION IN N-TYPE WELL-DOPED AND BARRIER-DOPED QUANTUM-WELLS

被引：2

作者：

GARINI, Y ^{[1
]}

COHEN, E ^{[1
]}

EHRENFREUND, E ^{[1
]}

RON, A ^{[1
]}

LAW, KK ^{[1
]}

MERZ, JL ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

来源：

SURFACE SCIENCE | 1992年 / 263卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(92)90409-Y

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using infrared (IR) photomodulation spectroscopy in lightly doped GaAs/AlGaAs multiple quantum wells (MQW), we study the changes in the e1-e2 intersubband absorption due to the interband excitations. For the barrier doped MQWs, we find that an impurity level which is approximately 60 meV below the barrier band-gap, strongly affects both the shape and intensity of the intersubband transitions. No such effects are observed in the well-doped MQWs.

引用

页码：561 / 564

页数：4

共 8 条

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