ELECTRON-TRANSPORT AND ENERGY-BAND STRUCTURE OF INSB

Various n-InSb crystals, pure and Te doped, were prepared using the horizontal zone-refining technique. The electrical conductivity and Hall coefficient of these samples were measured as functions of temperature from 90 to 470 K. By self-consistently fitting the theoretical transport parameters to the experimental data, a set of parameters was refined and/or determined. They include the optical band-gap variation E0(T) = [0.235 - 3.2 x 10(-4)T2/(220 + T)] eV, the heavy-hole effective mass M(hh)* = (0.20 +/- 0.02)m(e), and the acoustic deformation potential E(d) = (13 +/- 1) eV. Various scattering mechanisms and impurity phenomena are also discussed.