INFLUENCE OF F AND CL ON THE RECRYSTALLIZATION OF ION-IMPLANTED AMORPHOUS SI

被引：32

作者：

SUNI, I

SHRETER, U

NICOLET, MA

BAKER, JE

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.333957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：273 / 278

页数：6

共 10 条

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[4] ELECTRICAL-PROPERTIES OF SI HEAVILY IMPLANTED WITH BORON MOLECULAR-IONS [J].

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[5] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

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MAYER, JW ;

SIGMON, TW .

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[6]

MULLER H, 1971, ION IMPLANTATION SEM, P85

[7]

PRUSSIN S, 1975, ION IMPLANTATION SEM, P449

[8] COMPENSATING IMPURITY EFFECT ON EPITAXIAL REGROWTH RATE OF AMORPHIZED SI [J].

SUNI, I ;

GOLTZ, G ;

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LAU, SS .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :269-271

[9] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+ [J].

TSAI, MY ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :183-187

[10] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .2. MIGRATION OF FLUORINE IN BF2+-IMPLANTED SILICON [J].

TSAI, MY ;

DAY, DS ;

STREETMAN, BG ;

WILLIAMS, P ;

EVANS, CA .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :188-192

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