MEASUREMENT OF HOLE LEAKAGE AND IMPACT IONIZATION CURRENTS IN BISTABLE METAL TUNNEL-OXIDE SEMICONDUCTOR JUNCTIONS

被引：11

作者：

FOSSUM, ER ^{[1
]}

BARKER, RC ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 09期

关键词：

D O I：

10.1109/T-ED.1984.21683

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1168 / 1174

页数：7

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