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A NOVEL APPLICATION OF THE VERTICAL GRADIENT FREEZE METHOD TO THE GROWTH OF HIGH-QUALITY III-V CRYSTALS
被引:128
作者
:
GAULT, WA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
GAULT, WA
[
1
]
MONBERG, EM
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
MONBERG, EM
[
1
]
CLEMANS, JE
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
CLEMANS, JE
[
1
]
机构
:
[1]
AT&T TECHNOL INC,ENGN RES CTR,PRINCETON,NJ 08540
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1986年
/ 74卷
/ 03期
关键词
:
D O I
:
10.1016/0022-0248(86)90194-6
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:491 / 506
页数:16
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418
[14]
GAULT WA, 1985, Patent No. 4521272
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-
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MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139
HOLMES, DE
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论文数:
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GATOS, HC
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(02)
: 429
-
437
←
1
2
3
4
5
→